advanced power p-channel mosfet with schottky electronics corp. diode low gate charge bv dss -16v surface mount package r ds(on) 150m rohs compliant i d - 1.6a description absolute maximum ratings symbol units v ds v v ka v v gs v i d @t a =25 o c a i d @t a =70 o c a i dm a p d @t a =25 o c w w/ t stg o c t j o c symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 180 o c/w 180 o c/w data and specifications subject to change without notice 200808072 maximum thermal resistance, junction-ambient 3 (schottky) 20 0.005 -55 to 125 0.55 thermal data parameter total power dissipation operating junction temperature range storage temperature range parameter drain-source voltage gate-source voltage continuous drain current 3 reverse voltage (schottky) linear derating factor continuous drain current 3 -1.2 pulsed drain current 1 -6 1 AP6925GY rating -16 + 8 -1.6 rohs-compliant product -55 to125 k nc a s g d sot-26 g d s a k advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra lower on-resistance and cost-effectiveness.
ap6925g y electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -16 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =-1ma - -0.03 - v/ : r ds(on) static drain-source on-resistance 2 v gs =-4.5v, i d =-1.6a - - 150 m ? ? ?
ap6925g y fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. on-resistance vs. reverse diode drain current 3 0 2 4 6 0 0.5 1 1.5 2 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c - 5 0 v - 4 .0v - 3 .0v - 2.5 v v g = - 2.0 v 0 1 2 3 4 5 6 011223344 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =125 o c - 5.0 v - 4 .0v - 3 .0v - 2 .5v v g = - 2.0 v 100 125 150 175 200 0246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-1.2a t a =25 o c 0.6 0.8 1.0 1.2 1.4 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =- 1.6 a v g = -4.5 v 0.0 0.4 0.8 1.2 1.6 2.0 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =125 o c 100 120 140 160 180 0246 -i d , drain current (a) r ds(on) (m ? ) v gs =-4.5v v gs =-2.5v
ap6925g y fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fi g 10. effective transient thermal impedance schottky diode fig 1. reverse leakage current fig 2. forward voltage drop v.s. junction temperature 4 0 2 4 6 8 10 024681012 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds = -12v i d = -1.6a 10 100 1000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 240 0.01 0.1 1 10 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 10 25 50 75 100 125 t j , junction temperature ( o c) i r , reverse current (ma) 20v 16v 0.1 1 0 0.2 0.4 0.6 0.8 v f , forward voltage drop (v) i f , forward current (a) t j =125 o ct j =25 o c
package outline : sot-26 millimeters symbols min nom max a 2.70 2.90 3.10 b 2.60 2.80 3.00 c 1.40 1.60 1.80 d 0.30 0.43 0.55 e 0.00 0.05 0.10 g i j l 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : sot-26 0.37ref 0.95ref 1.90ref advanced power electronics corp. 0.12ref h 1.20ref ydyy part number : yd d date code yy:2004,2008,2012? yy :2003,2007,2011? y y:2002,2006,2010? yy :2001,2005,2009? c b l l g e j i a h 5
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